[HTML][HTML] Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
RD Richards, A Mellor, F Harun, JS Cheong… - Solar Energy Materials …, 2017 - Elsevier
A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …
the potential of GaAsBi for photovoltaic applications. The devices are compared with …
GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique
Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …
Effect of thermal annealing on the optical and structural properties of (311) B and (001) GaAsBi/GaAs single quantum wells grown by MBE
The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1− xBix layers grown by Molecular Beam Epitaxy
Abstract Current-Voltage (IV), Capacitance-Voltage (CV), Deep Level Transient
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Spectroscopy (DLTS), Laplace DLTS, Photoluminescence (PL) and Micro-Raman …
Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range
The present work aims to investigate the effect of strain on the optoelectronic properties of
GaNAsBi/GaAs (100) heterostructure by using the band anti-crossing model coupled with kp …
GaNAsBi/GaAs (100) heterostructure by using the band anti-crossing model coupled with kp …
Optical properties of GaAs1− xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311) B GaAs substrates
In this work, the electronic bandstructure of GaAs 1− x Bi x/GaAs single quantum well (QW)
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
samples grown by molecular beam epitaxy is investigated by photomodulated reflectance …
Industrial growth and characterization of Si‐doped GaAs crystal by a novel multi‐crucible Bridgman method
M Jin, H Shen, S Fan, Q He, J Xu - Crystal Research and …, 2017 - Wiley Online Library
In this wok, a novel multi‐crucible Bridgman method is developed to produce the Ø 2 inch Si‐
doped GaAs crystals. Five placements are designed in the furnace means five ingots could …
doped GaAs crystals. Five placements are designed in the furnace means five ingots could …
Strategic molecular beam epitaxial growth of GaAs/GaAsBi heterostructures and nanostructures
In this chapter, we go over epitaxial growth of bismide thin films, multiple quantum wells, and
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …
nanostructures (nanowires) using molecular beam epitaxy (MBE) and their surface …
Bismuth flux dependence of GaAsBi/GaAs MQWs grown by molecular beam epitaxy using two-substrate-temperature technique
PK Patil, F Ishikawa, S Shimomura - Superlattices and Microstructures, 2017 - Elsevier
Multi-quantum wells (MQWs) of GaAsBi/GaAs were grown by molecular beam epitaxy (MBE)
and dependence of its surface morphology, Bi content and optical properties on Bi beam …
and dependence of its surface morphology, Bi content and optical properties on Bi beam …
Investigation of structural and optical properties of dilute GaAsBi and InGaAsBi semiconductor nanostructures grown by molecular beam epitaxy
A Alhassni - 2023 - eprints.nottingham.ac.uk
This thesis investigates the optical and structural properties of GaAs1-xBix thin epitaxial
layers and self-assembled InGa (Bi) As quantum dots (QDs) grown on conventional (100) …
layers and self-assembled InGa (Bi) As quantum dots (QDs) grown on conventional (100) …