Stt-mram for embedded memory applications
With traditional embedded memories, such as eFlash and SRAM, facing major challenge of
scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies …
scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies …
22 nm Embedded STT-MRAM Macro with 10 ns Switching and >1014 Endurance for Last Level Cache Applications
We demonstrate high performance 22 nm embedded STT-MRAM with a distinct combination
of 10 ns write speed and> 10 14 endurance at chip level. This is achieved by developing a …
of 10 ns write speed and> 10 14 endurance at chip level. This is achieved by developing a …
[HTML][HTML] Magnetization switching in nanoelements induced by the spin-transfer torque: Study by massively parallel micromagnetic simulations
EK Semenova, DV Berkov - AIP Advances, 2019 - pubs.aip.org
In this paper we present a detailed numerical study of magnetization switching in shape-
anisotropic thin-film nanoelements. These elements are at present of the major interest for …
anisotropic thin-film nanoelements. These elements are at present of the major interest for …