Exploring neuromorphic computing based on spiking neural networks: Algorithms to hardware
Neuromorphic Computing, a concept pioneered in the late 1980s, is receiving a lot of
attention lately due to its promise of reducing the computational energy, latency, as well as …
attention lately due to its promise of reducing the computational energy, latency, as well as …
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Resistance switching in metal oxides could form the basis for next-generation non-volatile
memory. It has been argued that the current in the high-conductivity state of several …
memory. It has been argued that the current in the high-conductivity state of several …
Resistive random access memory (ReRAM) based on metal oxides
H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
Memristive switching mechanism for metal/oxide/metal nanodevices
JJ Yang, MD Pickett, X Li, DAA Ohlberg… - Nature …, 2008 - nature.com
Nanoscale metal/oxide/metal switches have the potential to transform the market for
nonvolatile memory and could lead to novel forms of computing. However, progress has …
nonvolatile memory and could lead to novel forms of computing. However, progress has …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
[HTML][HTML] Pathways to efficient neuromorphic computing with non-volatile memory technologies
Historically, memory technologies have been evaluated based on their storage density, cost,
and latencies. Beyond these metrics, the need to enable smarter and intelligent computing …
and latencies. Beyond these metrics, the need to enable smarter and intelligent computing …
[HTML][HTML] Black phosphorus quantum dots with tunable memory properties and multilevel resistive switching characteristics
Solution‐processed black phosphorus quantum‐dot‐based resistive random access
memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh …
memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh …
High-performance flexible polymer memristor based on stable filamentary switching
X Zhang, C Wu, Y Lv, Y Zhang, W Liu - Nano Letters, 2022 - ACS Publications
Polymer-based atomic switch memristors via the formation/dissolution of atomic-scale
conductive filaments are considered as the leading candidate for next-generation …
conductive filaments are considered as the leading candidate for next-generation …