Recent progress in the development of backplane thin film transistors for information displays
This review aims to provide a technical roadmap and progress update for backplane thin film
transistors (TFTs) used in organic light emitting diodes flat panel displays and next …
transistors (TFTs) used in organic light emitting diodes flat panel displays and next …
CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor
The development of high-performance oxide-based transistors is critical to enable very large-
scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal …
scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal …
Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors
This paper aims to discuss the key accomplishments and further prospects of active-matrix
(AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and …
(AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and …
Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources
ZnO thin films are deposited by atomic layer deposition (ALD) using diethylzinc as the Zn
source and H2O and H2O2 as oxygen sources. The oxidant‐and temperature‐dependent …
source and H2O and H2O2 as oxygen sources. The oxidant‐and temperature‐dependent …
Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors
In this work, we demonstrate the performance of a silicon-compatible, high-performance,
and self-powered photodetector. A wide detection range from visible (405 nm) to near …
and self-powered photodetector. A wide detection range from visible (405 nm) to near …
One-volt, solution-processed InZnO thin-film transistors
In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …
film transistors (TFTs). The annealing temperature of IZO films are studied and found that …
Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors
SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb (NMe2)
3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can …
3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can …
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
Contact resistance reduction of low temperature atomic layer deposition ZnO thin film transistor using Ar plasma surface treatment
In this work, the effect of Ar plasma at the S/D contact in a low temperature (200°) fabricated
ALD ZnO thin-film transistors (TFTs) for contact resistance reduction is systematically …
ALD ZnO thin-film transistors (TFTs) for contact resistance reduction is systematically …