Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

The mechanisms of technologically important atomic layer deposition (ALD) processes,
trimethylaluminium (TMA)/ozone and tetrakis (ethylmethylamino) hafnium (TEMAH)/ozone …

The aim of the study is to develop a more economical and easier method for obtaining ZrO 2
thin films at lower temperature, unlike the ones mentioned in the literature. For this purpose …

ZrO2 and Er2O3 thin films and nanolaminates were grown by atomic layer deposition from
tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) erbium, bis (methylcyclopentadienyl) …

The use of co-sputtered Zirconium Silicon Oxide (Zr x Si 1− x O 2) gate dielectrics to improve
the performance of α-IGZO TFT is demonstrated. Through modulating the sputtering power …

The electrochemical behaviors of hafnium (Hf) in Et4NBr ethanol solutions were investigated
using cyclic voltammetry, potentiodynamic polarization, chronoamperometry, impedance …

In this work we report the performance of the SiO2/Si3N4/HfO2 and SiO2/Si3N4/ZrO2 stacks
with emphasis on the influence of atomic layer deposition chemistry used for forming the …

Atomic layer deposition (ALD) of nanolaminates and mixtures was investigated for the
preparation of a high permittivity dielectric material. Variation in the relative number of ALD …

The effects of the initial pulse of tert-butyl iodide as a surfactant in atomic layer deposition of
HfO 2 using cyclopentadienyl tris (dimethylamino) hafnium, CpHf (NMe 2) 3, and ozone, O 3 …

Abstract films doped with were grown by atomic layer deposition from tris (2, 2, 6, 6-
tetramethyl-3, 5-heptanedionato) erbium, bis (methylcyclopentadienyl) …