Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

Processing at the atomic scale is becoming increasingly critical for state-of-the-art electronic
devices for computing and data storage, but also for emerging technologies such as related …

Atomic layer deposition (ALD) is a gas-phase deposition technique that, by relying on self-
terminating surface chemistry, enables the control of the amount of deposited material down …

With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx: H) thin films enjoy widespread
scientific interest across multiple application fields. Exceptional combination of optical …

Atomic layer deposition (ALD) of silicon nitride (SiN x) is deemed essential for a variety of
applications in nanoelectronics, such as gate spacer layers in transistors. In this work an …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication
of high-aspect-ratio features, including emerging design technology for manufacturability …

Organic light-emitting diodes (OLEDs) have aroused great attention due to the advantages
of high luminescent efficiency, fast response time, wide viewing angle, and the compatibility …

Organosilanes play an important role in organic synthesis as well as in a variety of further
areas, ranging from life science to transportation. Especially, the electrochemical access has …