Review of commercial GaN power devices and GaN-based converter design challenges
Gallium nitride (GaN) power devices are an emerging technology that have only recently
become available commercially. This new technology enables the design of converters at …
become available commercially. This new technology enables the design of converters at …
A review of high-speed GaN power modules: state of the art, challenges, and solutions
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …
systems. In high-speed hard-switching applications, voltage overshoot across device …
Methodology for wide band-gap device dynamic characterization
The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior
of power devices. Considering the high switching-speed capability of wide band-gap …
of power devices. Considering the high switching-speed capability of wide band-gap …
A review of switching oscillations of wide bandgap semiconductor devices
J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …
high power density to power converters due to their excellent performance. However, their …
Instability analysis and oscillation suppression of enhancement-mode GaN devices in half-bridge circuits
This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN)
transistors based half-bridge circuits. The instability may cause sustained oscillation …
transistors based half-bridge circuits. The instability may cause sustained oscillation …
Evaluation of switching loss contributed by parasitic ringing for fast switching wide band-gap devices
Parasitic ringing is commonly observed during the high-speed switching of wide band-gap
(WBG) devices. Additional loss contributed by parasitic ringing becomes a concern …
(WBG) devices. Additional loss contributed by parasitic ringing becomes a concern …
Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic on-Resistance in GaN HEMTs
The dynamic ON-resistance in gallium nitride (GaN) devices is problematic as it can impair
the converter's efficiency the increased conduction loss. In this paper, the hard-switching …
the converter's efficiency the increased conduction loss. In this paper, the hard-switching …
Characterization and failure analysis of 650-V enhancement-mode GaN HEMT for cryogenically cooled power electronics
In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a
cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN …
cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN …
Design of a 10 kW GaN-based high power density three-phase inverter
The medium power rating two-level three phase voltage source inverter is among the most
popular power conversion systems. The typical switching frequency of the commercial …
popular power conversion systems. The typical switching frequency of the commercial …
A generalized approach to determine the switching lifetime of a GaN FET
SR Bahl, F Baltazar, Y Xie - 2020 IEEE International Reliability …, 2020 - ieeexplore.ieee.org
The determination of switching lifetime for GaN products is a very timely and important topic,
both for the assurance of reliable operation in application, and for the development of …
both for the assurance of reliable operation in application, and for the development of …