[HTML][HTML] Epitaxial Growth of Ga2O3: A Review
Beta-phase gallium oxide (β-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG)
semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric …
semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric …
MOCVD Growth of β-Ga2O3 on (001) Ga2O3 Substrates
In this study, we comprehensively investigated the growth of β-Ga2O3 on (001) on-axis
Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD) using both …
Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD) using both …
Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm− 3) high-mobility (010) β-Ga2O3 drift layers
A Bhattacharyya, C Peterson… - Applied Physics …, 2024 - pubs.aip.org
This work reports high carrier mobilities and growth rates simultaneously in low
unintentionally doped (UID)(10 15 cm− 3) metalorganic chemical vapor deposition …
unintentionally doped (UID)(10 15 cm− 3) metalorganic chemical vapor deposition …
MOCVD Growth of Thick β-(Al) GaO Films with Fast Growth Rates
In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x) 2O3
films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) …
films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) …
Polarized photoluminescence from Sn, Fe, and unintentionally doped β-Ga2O3
In this work, we demonstrate that β-Ga 2 O 3 shows orientation-dependent polarized
photoluminescence (PL) emission and give a comprehensive insight into gallium oxide's PL …
photoluminescence (PL) emission and give a comprehensive insight into gallium oxide's PL …
Photoluminescence mapping of laser-damaged β-Ga2O3
J Huso, MD McCluskey, JS McCloy… - MRS …, 2024 - Springer
Photoluminescence (PL) mapping was utilized to investigate damage in β-Ga 2 O 3
epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV …
epilayers induced by 1064 nm laser pulses. The intensity and position of the intrinsic UV …
[PDF][PDF] Assessment of the β-Ga2O3 substrate orientation for µm-level-thick layers via MOVPE process
This study explores the transfer of optimized growth conditions from (100) to (010)
orientation in β-Ga2O3 lms via the metalorganic vapor phase epitaxy (MOVPE) process …
orientation in β-Ga2O3 lms via the metalorganic vapor phase epitaxy (MOVPE) process …