Layered thio-and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising
building blocks for next-generation nonvolatile memory devices. However, because of the …

Recent breakthroughs in brain-inspired computing promise to address a wide range of
problems from security to healthcare. However, the current strategy of implementing artificial …

Memory devices are an essential part of modern electronics. Efforts to move beyond the
traditional “read” and “write” of digital information in volatile and non‐volatile memory …

The ability to engineer potential profiles of multilayered materials is critical for designing
high-performance tunneling devices such as ferroelectric tunnel junctions (FTJs). FTJs …

The conventional reconfiguration of transistors requires an additional independent terminal
for controllable gate input, which complicates the device structure and makes circuit …

Ferroelectric tunnel junctions (FTJs) have been the subject of ongoing research interest due
to its fast operation based on the spontaneous polarization direction of ultrathin ferroelectrics …

The layered van der Waals CuInP2S6 (CIPS) features interesting functional behaviors,
including reversible ferroelectric polarization, Cu ion migration, negative capacitance effect …

Motivated by further miniaturization of conventional electronics, where dimensions
approaching the atomic scale leads to properties that are increasingly dominated by …