Polymer‐derived SiCN materials have great application potential in high‐temperature
environments. In the current work, SiCN ceramics were tailored with Hf incorporation …

Silicon and carbon containing non-oxide ceramics, such as SiC, SiCN, SiBCN, derived from
polymeric precursors show outstanding resistance towards creep and oxidation at high …

Hybrid bonding or surface activated bonding is becoming the technology to manufacture
higher density first-level interconnects by addressing pitch scaling difficulties of solder …

SiC x N y thin films were synthesized at a temperature of 700° C by the PECVD process,
using trimethylphenylsilane C 6 H 5 Si (CH 3) 3 (TMPhS) and ammonia as a reactive …

PECVD SiC: H (SiCN: H) films were produced using tetramethylsilane (TMS) as a precursor
in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions …

Silicon carbonitride (SiCN), an intermediate structure between silicon carbide and silicon
nitride, has emerged as a material of interest to increase the performance of silicon-based …

This manuscript reports the results of carbon nitride (CN x) film deposition carried out using
the gas injection magnetron sputtering method. In this experiment, a pulsed gas injection …

The study on amorphous hydrogenated silicon carbonitride (a‐SiCN) thin film coatings
produced by remote plasma chemical vapor deposition from 1, 1, 3, 3‐tetramethyldisilazane …

We report an investigation into 1, 4-Bis-N, N-(trimethylsilyl) piperazine (BTMSP) as a novel
precursor for the synthesis of silicon carbonitride films by chemical vapor deposition (CVD) …

Silicon-carbon films have been deposited on silicon and Al2O3/Cr-Cu substrates, making
use of the electrolysis of methanol/dimethylformamide-hexamethyldisilazane (HMDS) …