The III–V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have,
for some time now, been recognized as promising materials for novel electronic and …

The wide energy gap compound semiconductors, gallium nitride and zinc oxide, are widely
recognized as promising materials for novel electronic and optoelectronic device …

High field electron and hole transport in wurtzite phase GaN is studied using an ensemble
Monte Carlo method. The model includes the details of the full band structure derived from …

The room-temperature velocity-field characteristics for n-type gallium nitride and Al Ga N∕
Ga N heterostructures, grown epitaxially on sapphire, were determined experimentally. A …

In highly polar semiconductors with electron densities typically found in heterostructure field-
effect transistors (HFETs), transport cannot be described without taking hot phonons into …

Advances in nanotechnology have generated semiconductor structures that are only a few
molecular layers thick, and this has important consequences for the physics of electrons and …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and optoelectronic device applications. As informed device design requires a firm …

The III-V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have
been recognized as promising materials for novel electronic and optoelectronic device …

Based on accurate band structures of AlN, GaN, and InN, we report physical quantities
related to high-field electron transport, including effective masses, energies of inflection …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and opto-electronic device applications. As informed device design requires a firm …