DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped
field-effect transistors (FinFETs) is presented. Among other features, the model incorporates …

With the current scenario of different candidates to lead the road to 14 nm node and beyond,
this work presents a thorough Multi-Subband Ensemble Monte Carlo (MS-EMC) study of the …

In this paper, we present an analytical semiempirical model of the profile of the channel
charge and potential in quasi-ballistic double-gate (DG) MOSFETs. The charge model is …

We present a parallel deterministic solver for the Boltzmann–Schrödinger–Poisson system
for partially-confined DG-MOSFETs. Our 2D model uses a dimensional coupling: the …

In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo
(3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire …

The most extensive research of scaled electronic devices involves the inclusion of quantum
effects in the transport direction as transistor dimensions approach nanometer scales …

The scaling of device technologies poses new challenges, not only in circuit design, but also
in device modeling, especially because of the short-channel effects and the emergence of …

In this paper we extend our compact model for nanoscale double-gate (DG) MOSFETs
which considers a hydrodynamic transport model to include the effect of the temperature …

Because of the scaling of electronic devices, quantum effects play an important role on their
characteristics which are becoming more and more dominant as transistors approach to …

TFETs have become an alternative to conventional MOSFETs in the last years due to the
possibility of achieving low subthreshold swing (SS) that allows for low off current and …