Graphene self-switching diodes as zero-bias microwave detectors
Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated
epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on …
epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on …
Integration of antenna array and self-switching graphene diode for detection at 28 GHz
In this letter, a rectenna based on a graphene self-switching diode is presented. The
nonlinear behavior of the diode is beneficial to efficiently detect the RF power in the Ka …
nonlinear behavior of the diode is beneficial to efficiently detect the RF power in the Ka …
Room temperature direct and heterodyne detection of 0.28–0.69-THz waves based on GaN 2-DEG unipolar nanochannels
C Daher, J Torres, I Iñiguez-De-La-Torre… - … on Electron Devices, 2015 - ieeexplore.ieee.org
An experimental demonstration of GaN-based asymmetric nanodiodes as direct and
heterodyne detectors up to 0.69 THz has been performed at room temperature …
heterodyne detectors up to 0.69 THz has been performed at room temperature …
Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two
configuration schemes: voltage and current responsivity. The ratio between both figures of …
configuration schemes: voltage and current responsivity. The ratio between both figures of …
GaN nanodiode arrays with improved design for zero-bias sub-THz detection
H Sánchez-Martín, S Sánchez-Martín… - Semiconductor …, 2018 - iopscience.iop.org
GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC
substrate. They have been characterized as RF power detectors in a wide frequency range …
substrate. They have been characterized as RF power detectors in a wide frequency range …
Hybrid statistical and numerical analysis in structural optimization of silicon-based RF detector in 5G network
In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance
(ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device …
(ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device …
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
The zero-bias microwave detection capability of self-switching diodes (SSDs) based on
AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured …
AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured …
Broadband zero-bias RF field-effect rectifiers based on AlGaN/GaN nanowires
Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without
applied bias, which have applications ranging from RF power detection to terahertz imaging …
applied bias, which have applications ranging from RF power detection to terahertz imaging …
InGaAs self-switching diode-based THz bridge rectifier
Abstract Here, an In 0.53 Ga 0.47 As-based self-switching diode bridge rectifier (SSDBR) is
presented utilizing Silvaco TCAD computer simulations. A zero-bias self-switching diode …
presented utilizing Silvaco TCAD computer simulations. A zero-bias self-switching diode …
Extraction of trench capacitance and reverse recovery time of InGaAs self-switching diode
In this paper, we have presented the transient analysis of an InGaAs based novel nano
diode called self-switching device utilizing Silvaco TCAD simulator. The device exhibits …
diode called self-switching device utilizing Silvaco TCAD simulator. The device exhibits …