The detection of ionizing radiation such as X‐ray, γ‐ray, α‐particle, and neutrons has been
widely required in medical and industrial areas. Perovskite semiconductor detectors are …

Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active
spin-based quantum technologies. Spin qubits exist in specific charge states of these …

High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …

In this report, we demonstrate a novel high-temperature Hall effect sensor that is based on
quasi-free-standing monolayer graphene epitaxially grown on high-purity semiinsulating (SI) …

The Z 1/2 defect, a deep acceptor level in high purity semi-insulating (HPSI) 4H-SiC, plays
an important role in optoelectronic properties, particularly in below bandgap photon …

In this article, we focus on the physical modeling of the nonlinear operation of intrinsic
photoconductive semiconductor switches (PCSS) based on 4H-SiC using coupled electrical …

In this paper we present the current status of modelling the time evolution of the transient
conductivity of photoexcited semi-insulating (SI) 4H–SiC taking into account the properties of …

The production of silicon carbide boule for electronic device fabrication is bedeviled by
defects and requires the usage of stable, high symmetry, and high-quality substrate, as a …

Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing
and optoelectronic applications because the graphene acts as a transparent, conductive …

A model enabling the equilibrium conductivity and transient photoconductivity of semi-
insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations …