Thin film transistors (TFTs) with oxide semiconductors have drawn great attention in the last
few years, especially for large area electronic applications, such as high resolution active …

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film
transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have …

The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

In this review, we discuss the recent developments of high-performance and improved-
stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin …

We investigated the threshold voltage (V th) instability for various gate dielectrics (⁠ SiN x
and SiO x⁠) in amorphous indium-gallium-zinc oxide (⁠ a-IGZO) thin film transistors (TFTs) …

Thin Ga 2 O 3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the
precursors through plasma-enhanced atomic layer deposition. The depositions were made …

We investigated the transfer characteristics and the gate-bias stability of amorphous indium-
gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen …

This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor
(TFT) using trilayer gate dielectric on flexible substrate. Through integrating high …

We report on the origin of threshold voltage shift with the thickness of amorphous InGaZnO
channel layer deposited by rf magnetron sputter at room temperature, using density of states …

Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …