There is now a deep interest in actively reconfigurable nanophotonics as they will enable
the next generation of optical devices. Of the various alternatives being explored for …

Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family,
which undergoes reversible transition between amorphous and crystalline phase when …

By means of theory and experiments, the application capability of nickel ditelluride (NiTe2)
transition‐metal dichalcogenide in catalysis and nanoelectronics is assessed. The Te …

Abstract Chalcogenide composition of Te 81 Ge 15 Bi 4 was prepared by the melt
quenching technique in bulk form and by the thermal evaporation method in thin film form …

Various chalcogenide amorphous films of Te81Ge15Bi4 in the range (143–721 nm) were
synthesized using the thermal evaporation technique. The ac electrical conductivity σ ac ω …

The emergence of Dirac semimetals has stimulated growing attention, owing to the
considerable technological potential arising from their peculiar exotic quantum transport …

The lack of order in amorphous chalcogenides offers them novel properties but also adds
increased challenges in the discovery and design of advanced functional materials. The …

In this work, we study the effect of sputtering pressures on the thermoelectric properties of
GeTe films. The working pressures were differentiated from 3 to 30 mTorr, and the as …

Abstract 3D cross (X)–point memory arrays have attracted attention for future memory
architecture due to their cost efficiency and high density. Chalcogenide–based materials are …

GeTe films have been showed great applications in the field of optical devices, especially in
infrared absorption due to their narrow band gap. In this paper, amorphous GeTe (a-GeTe) …