Strain‐Engineered ultrahigh mobility in Phosphorene for Terahertz Transistors
Carrier mobility is a key parameter for the operation of electronic devices as it determines
the ON state current and switching speed/frequency response of transistors. 2D …
the ON state current and switching speed/frequency response of transistors. 2D …
Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
MA Giambra, C Benz, F Wu, M Thürmer… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
In this work, we report on the design, fabrication and characterization of Metal-Oxide
Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries …
Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries …
[PDF][PDF] Modeling, estimation and reduction of total leakage in scaled CMOS logic circuits
N Sachdeva - 2021 - dspace-jcboseust.refread.com
Metal oxide semiconductor (MOSFET) is the most important promising building block of Very-
Large-Scale Integrated (VLSI) circuits due to its incomparable properties. Both the …
Large-Scale Integrated (VLSI) circuits due to its incomparable properties. Both the …