[图书][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
[HTML][HTML] Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors
Deep-UV distributed Bragg reflectors (DBRs) operating at λ= 220–250 nm with reflectivity
close to unity were produced using epitaxial Al x Ga 1-x N/AlN superlattice structures grown …
close to unity were produced using epitaxial Al x Ga 1-x N/AlN superlattice structures grown …
[HTML][HTML] Looking for Auger signatures in III-nitride light emitters: A full-band Monte Carlo perspective
Recent experiments of electron emission spectroscopy (EES) on III-nitride light-emitting
diodes (LEDs) have shown a correlation between droop onset and hot electron emission at …
diodes (LEDs) have shown a correlation between droop onset and hot electron emission at …
III-N wide bandgap deep-ultraviolet lasers and photodetectors
The III-N wide-bandgap alloys in the AlInGaN system have many important and unique
electrical and optical properties which have been exploited to develop deep-ultraviolet …
electrical and optical properties which have been exploited to develop deep-ultraviolet …
Optical properties of III-nitride semiconductors
PP Paskov, B Monemar - Handbook of GaN Semiconductor …, 2017 - taylorfrancis.com
The optical properties of the group-III-nitride materials are obviously of direct relevance for
optoelectronic applications, but experiments measuring optical properties also give …
optoelectronic applications, but experiments measuring optical properties also give …
[PDF][PDF] Point defect identification and management for sub-300 nm light emitting diodes and laser diodes grown on bulk AlN substrates
ZA Bryan - 2015 - repository.lib.ncsu.edu
BRYAN, ZACHARY A. Point Defect Identification and Management for Sub-300 nm Light
Emitting Diodes and Laser Diodes Grow Page 1 ABSTRACT BRYAN, ZACHARY A. Point Defect …
Emitting Diodes and Laser Diodes Grow Page 1 ABSTRACT BRYAN, ZACHARY A. Point Defect …
Status and challenges in deep UV semiconductor lasers
Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors
lasers have not been realized yet. UV optoelectronic devices have a variety of applications …
lasers have not been realized yet. UV optoelectronic devices have a variety of applications …
Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm
A near-ultraviolet (367-nm) InGaN light-emitting diode (LED) with 5.75 nm quantum well
depth was designed and both internal/external quantum efficiency (IQE/EQE) values were …
depth was designed and both internal/external quantum efficiency (IQE/EQE) values were …
Optical properties and band structure of highly doped gallium nitride
R Goldhahn, K Lange… - Gallium Nitride Materials …, 2015 - spiedigitallibrary.org
Spectroscopic ellipsometry is applied for determining the ordinary and extraordinary
dielectric functions of wurtzite GaN for different free-electron concentrations. The analysis of …
dielectric functions of wurtzite GaN for different free-electron concentrations. The analysis of …