Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

L Dobaczewski, AR Peaker… - Journal of applied …, 2004 - pubs.aip.org
Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

[HTML][HTML] Diffusion of n-type dopants in germanium

A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Oxygen defects in phosphorene

A Ziletti, A Carvalho, DK Campbell, DF Coker… - Physical review …, 2015 - APS
Surface reactions with oxygen are a fundamental cause of the degradation of phosphorene.
Using first-principles calculations, we show that for each oxygen atom adsorbed onto …

Wigner defects bridge the graphite gap

RH Telling, CP Ewels, AA El-Barbary, MI Heggie - Nature materials, 2003 - nature.com
We present findings on the structure, energies and behaviour of defects in irradiated
graphitic carbon materials. Defect production due to high-energy nuclear radiations …

Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy

EV Lavrov, J Weber, F Börrnert, CG Van de Walle… - Physical Review B, 2002 - APS
Two hydrogen-related defects in ZnO are identified by a combination of local vibrational
mode spectroscopy and first-principles theory. The HI center consists of one hydrogen atom …

Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces

SJ Sque, R Jones, PR Briddon - Physical Review B—Condensed Matter and …, 2006 - APS
The atomic geometry and electronic structure of diamond surfaces, both clean and with
various hydrogen and oxygen terminations, have been studied using ab initio density …

Theory of hydrogen in diamond

JP Goss, R Jones, MI Heggie, CP Ewels, PR Briddon… - Physical Review B, 2002 - APS
Ab initio cluster and supercell methods are used to investigate the local geometry and
optical properties of hydrogen defects in diamond. For an isolated impurity, the bond …

Stacking faults in and polytypes investigated by an ab initio supercell method

U Lindefelt, H Iwata, S Öberg, PR Briddon - Physical Review B, 2003 - APS
Recent attempts to make SiC diodes have revealed a problem with stacking fault expansion
in the material, leading to unstable devices. In this paper, we present detailed results from a …

Extended defects in diamond: The interstitial platelet

JP Goss, BJ Coomer, R Jones, CJ Fall, PR Briddon… - Physical review B, 2003 - APS
The structure and properties of the {001} planar platelet in diamond are investigated using
ab initio theory. We find that a carbonaceous model, based on a layer of self-interstitials …

[HTML][HTML] Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells

M Vaqueiro-Contreras, VP Markevich… - Journal of Applied …, 2019 - pubs.aip.org
Silicon solar cells containing boron and oxygen are one of the most rapidly growing forms of
electricity generation. However, they suffer from significant degradation during the initial …