The electronic structure of a single domain Si (110)-(16× 2) surface has been investigated
by high-resolution angle-resolved photoelectron spectroscopy and scanning tunneling …

The universal building block which is an essential part of all atomic structures on (1 1 0)
silicon and germanium surfaces and their vicinals is proposed from first-principles …

Understanding and engineering the properties of crystalline surfaces has been critical in
achieving functional electronics at the nanoscale. Employing scanning tunneling …

We perform total‐energy electronic‐structure calculations based on density functional theory
in the framework of the local density approximation to discuss the surface energy …

The electronic structure of the Si (110)-(16× 2) surface was studied by scanning tunneling
microscopy at room temperature (RT) and at 78 K. A combination of point tunneling …

Micrometer-wide single domain of Si (110)-16× 2 reconstruction has been fabricated by
means of controlled electromigration of surface atoms. The electromigration effect in dc …

Terbium induced nanostructures on Si (110) and their growth are thoroughly characterized
by low energy electron diffraction, scanning tunneling microscopy and spectroscopy, core …

A widely well-defined homochiral surface is realized on Si (110), manipulating surface
reconstruction by electromigration. Controlled switching of the surface handedness has also …

We report that the large-scale self-organization of well-ordered parallel C 60 molecular
nanowire arrays with tunable structures on Si (110) surfaces can be achieved through a site …

Silicon is one of the most well-studied crystals in terms of surface structure. In particular, the
three low Miller index surfaces—(100),(110), and (111)—which are located at the three …