Abstract Lead‐halide perovskites (LHPs), in the form of both colloidal nanocrystals (NCs)
and thin films, have emerged over the past decade as leading candidates for next …

The subject of this book is the investigation of lattice imperfections in semiconductors by
means of positron annihilation. A comprehensive review is given of the different positron …

We describe information which has been obtained on point defects detected in various types
of GaAs materials using electron paramagnetic resonance as well as electrical and optical …

We propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable,
threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height …

We performed parameter-free, self-consistent calculations of the electronic structures, total
energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of …

We report parameter-free, self-consistent calculations of the electronic structures, total
energies, and forces of the As Ga antisite, of an As-interstitial–Ga-vacancy defect pair, and of …

Increasing epitaxial growth rate is an important path toward III-V solar cell cost reductions;
however, photovoltaic device performance has been shown to degrade with increasing …

ABSTRACT Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold immense
promise as ultrathin-body semiconductors for cutting-edge electronics and optoelectronics …

We examine the correlation of the interfacial chemistry of atomic layer deposited, high-k/III–V
interfaces with device behavior in view of first principles modelling. We find that the oxidation …

A monovacancy defect is observed by positron-lifetime and Doppler-broadening
experiments in semi-insulating GaAs after photoquenching the EL2 defects. The …