Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of
less than about 200 C. and is treated with helium plasma to reduce stress of the deposited …

(57) ABSTRACT A method of fabricating a metal interconnection and a method of fabricating
image sensor using the same are provided. The method of fabricating a metal …

A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables
process-induced damage repair. The method is particularly applicable in the context of …

An interconnect structure that includes a dielectric material having a dielectric constant of
about 3.0 or less is provided. This low k dielectric material has at least one conductive …

Abstract Treatment of carbon-containing low-k dielectric with UV radiation and a reducing
agent enables process-induced damage repair. Also, treatment with a reducing agent and …

(57) ABSTRACT A method for the ultraviolet (UV) treatment of carbon-con taining low-k
dielectric and associated apparatus enables pro cess induced damage repair. The methods …

A porous SiCOH (eg p-SiCOH) dielectric film in which the stress change caused by
increased tetrahedral strain is mini mized by post treatment in unsaturated Hydrocarbon …

(57) ABSTRACT A low-k dielectric material with increased cohesive strength for use in
electronic structures including interconnect and sensing structures is provided that includes …

In the following description, numerous specific details are set forth in order to provide a
thorough understanding of the present invention. The present invention may be practiced …

A method of fabricating an interconnect structure on a wafer and an interconnect structure
are provided. A dielectric layer is provided on the wafer. An interconnect is formed by …