Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …

In this article, the DC and RF performance of a SiN passivated 20-nm gate length
metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with highly doped …

In this paper, the RF and DC behaviours of a SiN-passivated 20-nm gate length
metamorphic high electron mobility transistor (MHEMT) on GaAs substrate with\updelta δ …

Recently, InGaAs-channel-based high-electron-mobility transistors (HEMTs), typically grown
on InP substrates, have emerged as key components for next-generation wireless …

In this work, the performance of Lg D 22 nm In0: 75Ga0: 25As channel-based high electron
mobility transistor (HEMT) on InP substrate is compared with metamorphic high electron …

In this work, the performance of ${L} _ {{\rm {g}}}= 22$ nm In ${} _ {0.75}{{\rm {Ga}}} _ {0.25} $
As channel-based high electron mobility transistor (HEMT) on InP substrate is compared …

Abstract III–V Metal–Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with a high-κ
dielectric gate stack are investigated as a possible route to enhance the performance of …

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate
a GaAs-based InA1As/InGaAs metamorphic high electron mobility transistor (HEMT) grown …

Platinum (Pt/Ti/Pt/Au) gate contact of AlGaN/GaN high electron mobility transistor (HEMT)
with low gate leakage current is demonstrated. For comparison, Titanium (Ti/Al/Ti) gate …

The article describes the use of E/D III/V gallium arsenide (GaAs) pseudomorphic high
electron mobility transistor (PHEMT) processes in achieving high performance amplifiers …