A 60 gops/w,− 1.8 v to 0.9 v body bias ulp cluster in 28 nm utbb fd-soi technology
Ultra-low power operation and extreme energy efficiency are strong requirements for a
number of high-growth application areas, such as E-health, Internet of Things, and wearable …
number of high-growth application areas, such as E-health, Internet of Things, and wearable …
Temperature and process-aware performance monitoring and compensation for an ULP multi-core cluster in 28nm UTBB FD-SOI technology
Environmental temperature variations, as well as process variations, have a detrimental
effect on performance and reliability of embedded systems implemented with deep-sub …
effect on performance and reliability of embedded systems implemented with deep-sub …
Temperature-based adaptive memory sub-system in 28nm UTBB FDSOI
A Chhabra, M Srivastava, PR Gupta… - … on Circuits and …, 2016 - ieeexplore.ieee.org
Temperature plays a crucial role in deciding SRAM performance especially at very low
voltage. SRAM bitcell has conflicting constraints of write-ability and stability at cold (− 40° C …
voltage. SRAM bitcell has conflicting constraints of write-ability and stability at cold (− 40° C …
-1.1 V to+ 1.1 V 3: 1 Power Switch Architecture for Controlling Body Bias of SRAM Array in 28nm UTBB CMOS FDSOI
A Chhabra, V Rana - … Conference on VLSI Design and 2016 …, 2016 - ieeexplore.ieee.org
Temperature dependent body bias modulation of array reduces SRAM V MIN thereby
reducing overall dynamic power. Fully Depleted Silicon On Insulator (FDSOI) technology …
reducing overall dynamic power. Fully Depleted Silicon On Insulator (FDSOI) technology …
[引用][C] Advances in power management of many-core processors
A Bartolini, D Rossi - Many-Core Computing: Hardware …, 2019 - Computing and Networks