Traditional von Neumann architecture is facing severe challenges due to separated physical
structure of memory and processing units, which inspires the development of in‐memory …

In the incessant search to overcome the power densities and energy efficient limitations,
performance matrix of emerging electronic devices are being explored inevitably to find the …

In this paper, we have discussed threshold voltage and drain induced barrier lowering in
NCFET. Threshold voltage in NCFET is lower as compared to MOSFET which is mainly …

In this article, we have performed a comprehensive study into the Phase Transition Material
based FinFET (PT-FinFET) device's capabilities for low-power, energy-efficient applications …

In this paper, a detailed evaluation of negative capacitance FinFET (NC-FinFET) based
volatile static random access memory (6T-NCSRAM) is carried out by utilizing LK equation …

In this study, we evaluated the temperature-and frequency-dependent ferroelectric
characteristics of TiN/undoped HfO2/TiN metal-ferroelectric-metal (MFM) capacitors in which …

This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide
and different ferroelectric oxides. This study is focused on the enhancement of capacitance …

Abstract Negative Capacitance Field Effect Transistors are well known for their superior
performance over MOSFET and are a viable candidate to succeed the baseline FET in time …

In this article, we have studied passive voltage amplification in FE-FE-DE heterostructure.
We have stacked two different ferroelectric oxides; one is second-order transition …

The ferroelectric properties evidenced on undoped hafnium oxide, which are similar to those
of doped HfO 2⁠, are rather unexpected since it is believed that doping is a prerequisite for …