An overview of state-of-the-art D-band radar system components
P Stadler, H Papurcu, T Welling, S Tejero Alfageme… - Chips, 2022 - mdpi.com
In this article, a literature study has been conducted including 398 radar circuit elements
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
from 311 recent publications (mostly between 2010 and 2022) that have been reported …
A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm Psat in 130-nm SiGe
A Karakuzulu, MH Eissa, D Kissinger… - IEEE Microwave and …, 2020 - ieeexplore.ieee.org
This letter presents a fully integrated three-stage single-ended D-band power amplifier (PA)
designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth …
designed in 0.13-μm silicon-germanium (SiGe) BiCMOS technology. Several bandwidth …
90–140 GHz frequency octupler in Si/SiGe BiCMOS using a novel bootstrapped doubler topology
S Yuan, H Schumacher - 2014 9th European Microwave …, 2014 - ieeexplore.ieee.org
This paper presents a novel bootstrapped frequency doubler, which is used to implement a
wideband frequency multiplier-by 8 with balanced differential output. In terms of conversion …
wideband frequency multiplier-by 8 with balanced differential output. In terms of conversion …
Analysis and design of D-band cascode SiGe BiCMOS amplifiers with gain-bandwidth product enhanced by load reflection
Emerging applications in D-band (110–170GHz) demand amplifiers with high gain-
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
bandwidth (GBW) products. In this frequency range, the cascode stage offers superior …
A 135–170 GHz power amplifier in an advanced SiGe HBT technology
N Sarmah, B Heinemann… - 2013 IEEE Radio …, 2013 - ieeexplore.ieee.org
Summary form only given. High-power, broadband power amplifiers (PA) operating in the D-
band (110-170 GHz) are essential towards implementation of broadband frequency …
band (110-170 GHz) are essential towards implementation of broadband frequency …
A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13 μm SiGe BiCMOS technology
In this paper, the authors present a monolithically integrated W-band low-noise-amplifier
realized in an 0.13 μm SiGe BiCMOS technology. The design utilizes a two-stage cascode …
realized in an 0.13 μm SiGe BiCMOS technology. The design utilizes a two-stage cascode …
Novel frequency quadrupler design covering the entire V-Band in 0.13-μm SiGe process
S Yuan, H Schumacher - 2014 IEEE 14th Topical Meeting on …, 2014 - ieeexplore.ieee.org
This paper presents a novel quadrupler design that adopts the proposed polyphase filter
based doubler as the first stage, which generates a differential output signal for the second …
based doubler as the first stage, which generates a differential output signal for the second …
110–140-GHz single-chip reconfigurable radar frontend with on-chip antenna
S Yuan, H Schumacher - 2015 IEEE Bipolar/BiCMOS Circuits …, 2015 - ieeexplore.ieee.org
This paper presents a 110-140GHz reconfigurable radar frontend IC with on-chip antenna.
The IC contains two switchable input buffers, two frequency multipliers, a PA, an LNA, a …
The IC contains two switchable input buffers, two frequency multipliers, a PA, an LNA, a …
Design of Compact D-Band Amplifiers With Accurate Modeling of Inductors and Current Return Paths in 55-nm SiGe BiCMOS
This letter presents 1-stage and 2-stage compact D-band amplifiers with lumped-element
matching networks implemented in 55 nm SiGe BiCMOS. To correctly account for the effects …
matching networks implemented in 55 nm SiGe BiCMOS. To correctly account for the effects …
150 GHz Differential Amplifiers with Lumped-Elements Matching Networks in 55 nm SiGe BiCMOS
This paper presents compact D-band amplifiers in 55 nm SiGe BiCMOS technology. Device
models and design tools are first validated with measurements on elementary components …
models and design tools are first validated with measurements on elementary components …