New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

Photo-electrochemical (PEC) etching was used to fabricate deep trench structures in a GaN-
on-GaN epilayer grown on n-GaN substrates. A 50-nm-thick layer of Ti used for an etching …

The luminescent properties of Mg-doped GaN have recently received particular attention,
eg, in the light of new theoretical calculations, where the deep 2.9 eV luminescence band …

Thin‐film photovoltaics (PV) have emerged as a technology that can meet the growing
demands for efficient and low‐cost large‐scale cells. However, the photoabsorbers currently …

Halide vapor phase epitaxy of p-type GaN: Mg films was realized by using solid MgO as the
Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source …

In this paper, we report on growth of ultraviolet light‐emitting diode (UV LED)
heterostructures by hydride vapour phase epitaxy (HVPE) on sapphire substrates and …

In this paper, we present results on development of ultraviolet light‐emitting diodes (UV
LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride …

Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the
important role of the impurity in light-emitting diodes and high-power electronics. However …

The dependence of the carrier distribution on photoexcited carrier dynamics in a p-type Mg-
doped GaN (GaN: Mg) wafer were systematically measured by femtosecond transient …

The results of work on developing and studying ultraviolet (UV) light-emitting diodes (LEDs)
based on GaN/AlGaN heterostructures fabricated on Al 2 O 3 (0001) substrates by the …