Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received
great attention due to its unique properties. Because of low cost, absence of toxicity, and …

Thin film solar cells made from earth‐abundant, non‐toxic materials are needed to replace
the current technology that uses Cu (In, Ga)(S, Se) 2 and CdTe, which contain scarce and …

Atmospheric pressure chemical vapor deposition of SnS2, Sn2S3, and SnS has been
achieved onto glass substrates from the reaction of SnCl4 with H2S at 300− 545° C. The …

SnS thin films with different thicknesses have been deposited on glass substrates at a
substrate temperature of 300° C. The influence of thickness on structural, morphological …

Thin films of SnS have been prepared by electron beam evaporation. The films represent
Herzbergite orthorhombic structure, established by their XRD patterns. The band gap energy …

Tin sulfide nanoparticles were synthesized through wet chemical route. Structure and phase
purity were confirmed by powder XRD. Morphology and size were identified from TEM and …

Thermally evaporated SnS amorphous chalcogenide films undergo structural transformation
upon annealing in the temperature range between 432–573 K. The optical properties of …

Chemically deposited SnS thin films possess p-type electrical conductivity. We report a
photovoltaic structure: SnO2: F–CdS–SnS–(CuS)–silver print, with Voc> 300 mV and Jsc up …

Thin films of SnS have been prepared by chemical bath deposition and thermally treated in
argon atmosphere at different temperatures. As-prepared films were polycrystalline of an …

In order to develop high performance chemoresistive gas sensors for Internet of Everything
applications, low power consumption should be achieved due to the limited battery capacity …