Apparatuses and methods for atomic layer deposition

H Lam, B Zheng, H Ai, M Jackson, XJ Yuan… - US Patent …, 2012 - Google Patents
Prior Publication Data Embodiments of the invention provide apparatuses and meth US
201O/OOO34O6A1 Jan. 7, 2010 ods for atomic layer deposition (ALD), Such as plasma-en …

Inverted diffuser stagnation point flow reactor for vapor deposition of thin films

PN Gadgil - US Patent 5,284,519, 1994 - Google Patents
This invention pertains to a metalorganic chemical vapor deposition reactor comprising a
gas mixing cham ber with gas entry ports into the mixing chamber; a substrate for deposition …

Method and a device for epitaxial growth of objects by chemical vapor deposition

P Lofgren, CY Gu, C Hallin, Y Liu - US Patent 6,093,253, 2000 - Google Patents
The object of the present invention is to provide a method and a device according to the
introduction, which makes it possible to increase the growth rate when growing objects by …

Laser based display method and system

JW Raring, P Rudy - US Patent 8,427,590, 2013 - Google Patents
The present invention is directed to display technologies. More specifically, various
embodiments of the present invention provide projection display systems where one or more …

COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs

JW Raring, DF Feezell, MP D'evelyn - US Patent App. 12/491,176, 2010 - Google Patents
A packaged light emitting device. The device has a Substrate member comprising a Surface
region. The device has a Sub strate member comprising a surface region. The device also …

Solid-state optical device having enhanced indium content in active regions

JW Raring, DF Feezell, S Nakamura - US Patent 8,847,249, 2014 - Google Patents
US8847249B2 - Solid-state optical device having enhanced indium content in active regions -
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …

Double heterojunction light emitting diode with gallium nitride active layer

JA Edmond, HS Kong - US Patent 5,739,554, 1998 - Google Patents
A double heterostructure for a light emitting diode comprises a layer of aluminum gallium
nitride having a first conductivity type; a layer of aluminum gallium nitride having the …

Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates

JW Raring, N Pfister, M Schmidt, C Poblenz - US Patent 8,355,418, 2013 - Google Patents
7.923, 741 B1 4, 2011 Zhai et all-4- 2009, 0081857 A1 3f2009 Hanser et al. 7,939,354 B2
5/2011 Kyono et al. 7968.864 B2 6, 2011 Akita et al. 2009/0081867 A1 3, 2009 Taguchi et …

Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates

JW Raring, N Pfister, M Schmidt, C Poblenz - US Patent 8,351,478, 2013 - Google Patents
7,009,199 B2 3/2006 Hall 2008/00879 19 A1 4/2008 Tysoe et al. 2.933, 858 B2 4.2996 Chai
et al. 2008/00928.12 A1 4/2008 McDiarmid et al. 7053, 413 B2 5 2006 PEvelyn et al …

Tapered Horizontal Growth Chamber

JW Raring, A Chakraborty, M Coulter - US Patent App. 13/046,565, 2011 - Google Patents
A system and techniques for performing deposition having a tapered horizontal growth
chamber which includes a susceptor and a tapered channel flow block. A tapered chamber …