In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

We investigate the transport properties of a two-dimensional electron gas residing in
strained composite quantum wells of In 0.75 Ga 0.25 As/InAs/In 0.75 Ga 0.25 As cladded …

The depth profiles of metamorphic In x Al 1− x As (0.05< x< 1) buffer layers grown on GaAs
substrates were characterized using the x-ray reciprocal space mapping. Three types of …

We report a combined experimental and theoretical analysis of Sb and In segregation during
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …

Abstract Modulation doped metamorphic In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As quantum
wells (QW) were grown on GaAs substrates by molecular beam epitaxy (MBE) with step …

The crossover from quasi-two-to quasi-one-dimensional electron transport subject to
transverse electric fields and perpendicular magnetic fields is studied in the diffusive to …

Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from
two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is …

We have measured the Landau-level spin-splitting of two-dimensional electrons in the
composite InAs/InGaAs channels of two InAs/InGaAs/InAlAs heterostructures with different …

The large lattice mismatch (7%) between InAs and GaAs leads to a complex microstructure
with many misfit-derived defects. The dependence of the microstructure and morphology of …

Modulation doping using Mn as an acceptor has been applied to the molecular beam
epitaxial grown compressively strained InAs channels. Strain engineering has been …