Changes and challenges of photovoltaic inverter with silicon carbide device
High efficiency, high power density, and high reliability are always the technical trends of
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
converters for renewable energy applications. Silicon carbide (SiC) devices can break …
Short-Circuit Characterization and Protection of 10-kV SiC mosfet
This paper presents the characterization of the temperature-dependent short-circuit
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
An integrated GaN overcurrent protection circuit for power HEMTs using SenseHEMT
GaN power high-electron-mobility transistors (HEMTs), with their fast switching transients
and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can …
and poor overcurrent tolerance, require overcurrent protection (OCP) circuits that can …
Review of methodologies for evaluating short-circuit robustness and reliability of SiC power MOSFETs
To accelerate the broad application of silicon carbide (SiC) power MOSFETs, their short-
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
circuit (SC) robustness and reliability must be thoroughly evaluated. This article, therefore …
Short-circuit performance of multi-chip SiC MOSFET modules
A Kadavelugu, E Aeloiza… - 2017 IEEE 5th Workshop …, 2017 - ieeexplore.ieee.org
This paper presents short-circuit test results on commercial, multi-chip 1200 V SiC MOSFET
half-bridge modules up to 860 V dc, suitable for three-phase 480 V grid-interfaced …
half-bridge modules up to 860 V dc, suitable for three-phase 480 V grid-interfaced …
Short circuit characterization of 3rd generation 10 kV SiC MOSFET
The short circuit performance of a 3 rd generation 10 kV/20 A SiC MOSFET with short
channel is characterized in this paper. The platform consisting of a phase-leg configuration …
channel is characterized in this paper. The platform consisting of a phase-leg configuration …
Comparison of thermal stress during short-circuit in different types of 1.2-kV SiC transistors based on experiments and simulations
The temperature evolution during a short-circuit (SC) fault in the dies of three different silicon
carbide (SiC) 1200-V power devices is presented in this article. Transient electrothermal …
carbide (SiC) 1200-V power devices is presented in this article. Transient electrothermal …
Selection methodology for Si power MOSFETs used to enhance SiC power MOSFET short-circuit capability with the BaSIC (EMM) topology
The BaSIC (EMM) topology has been previously demonstrated to improve the short-circuit
(SC) capability of 1.2-kV SiC power MOSFETs from 3.5 to 7.4 μs while producing a 17 …
(SC) capability of 1.2-kV SiC power MOSFETs from 3.5 to 7.4 μs while producing a 17 …
Theoretical optimization of the Si GSS-DMM device in the BaSIC topology for SiC power MOSFET short-circuit capability improvement
The BaSIC (DMM) topology has been experimentally demonstrated to improve the short-
circuit time for a 1.2 kV SiC power MOSFET product from 4.8 μs to 7.9 μs with a 17 …
circuit time for a 1.2 kV SiC power MOSFET product from 4.8 μs to 7.9 μs with a 17 …
An experimental demonstration of short circuit protection of SiC Devices
An experimental demonstration of an effective short circuit protection scheme for SiC
MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC …
MOSFETs is presented in this paper. Measurements of the static characteristics of the SiC …