Energy dissipation and transport in nanoscale devices
E Pop - Nano Research, 2010 - Springer
Understanding energy dissipation and transport in nanoscale structures is of great
importance for the design of energy-efficient circuits and energy-conversion systems. This is …
importance for the design of energy-efficient circuits and energy-conversion systems. This is …
Heat generation and transport in nanometer-scale transistors
As transistor gate lengths are scaled towards the 10-nm range, thermal device design is
becoming an important part of microprocessor engineering. Decreasing dimensions lead to …
becoming an important part of microprocessor engineering. Decreasing dimensions lead to …
Thermal phenomena in nanoscale transistors
E Pop, KE Goodson - 2006 - asmedigitalcollection.asme.org
As CMOS transistor gate lengths are scaled below 45 nm, thermal device design is
becoming an important part of microprocessor engineering. Decreasing dimensions lead to …
becoming an important part of microprocessor engineering. Decreasing dimensions lead to …
Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation
C Fiegna, Y Yang, E Sangiorgi… - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
This paper discusses self-heating (SHE) effects in silicon-on-insulator (SOI) CMOS
technology and applies device simulation to analyze the impact of thermal effects on the …
technology and applies device simulation to analyze the impact of thermal effects on the …
Brief historical perspective in thermal management and the shift toward management at the nanoscale
JL Smoyer, PM Norris - Heat Transfer Engineering, 2019 - Taylor & Francis
Since the early days of computing, excess heat has been a major road block in the design
and development of faster, more efficient, and more compact electronic devices. Coupled …
and development of faster, more efficient, and more compact electronic devices. Coupled …
Electrothermal effects on hot-carrier reliability in SOI MOSFETs—AC versus circuit-speed random stress
Computational study of electrothermal effects on hot-carrier injection (HCI) in 100-nm silicon-
on-insulator (SOI) MOSFET for digital integrated circuit is performed using in-house …
on-insulator (SOI) MOSFET for digital integrated circuit is performed using in-house …
[图书][B] Self-heating and scaling of thin body transistors
E Pop - 2005 - search.proquest.com
The most often cited technological roadblock of nanoscale electronics is the “power
problem,” ie power densities and device temperatures reaching levels that will prevent their …
problem,” ie power densities and device temperatures reaching levels that will prevent their …
[图书][B] ESD protection circuits for advanced CMOS technologies
JH Chun - 2006 - search.proquest.com
Electrostatic Discharge (ESD) has become one of the most critical reliability issues in
integrated circuits (ICs). In this dissertation, a variety of ESD issues in advanced …
integrated circuits (ICs). In this dissertation, a variety of ESD issues in advanced …
Epitaxial Ge-Gd2O3 on Si (111) substrate by sputtering for germanium-on-insulator applications
Abstract Germanium-on-insulator (GeOI) technology is a potential-alternative to the bulk-
silicon based devices for radio-frequency (RF), and complementary metal oxide …
silicon based devices for radio-frequency (RF), and complementary metal oxide …
Compact modeling of mutual thermal coupling for the optimal design of SiGe HBT power amplifiers
JM Andrews, CM Grens… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
Most bipolar-transistor compact models incorporate some level of self-heating capability in
order to determine the impact of thermal effects on circuit performance. Techniques for …
order to determine the impact of thermal effects on circuit performance. Techniques for …