The modeling, design, and experimental evaluation of both a 400-GHz transmitter and
receiver submillimeter-wave monolithic integrated circuit (S-MMIC) is presented in this …

Design and characterization of InP DHBT amplifiers in common-emitter and common-base
topologies are presented. Both one-stage and multistage circuits are demonstrated. For one …

This letter presents a broadband and high-gain differential amplifier (DA) with a common-
mode rejection circuit (CMRC) using 60-nm InP-HEMT technology. The differential pair in …

The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers
milliwatts of output power and high signal amplification in the lower end of the terahertz …

This paper presents design and characterization of D-band (110-170 GHz) monolithic
microwave integrated quadrature up-and down-converting mixer circuits with on-chip RF …

We developed a 475-GHz power amplifier (PA) by using our in-house 60-nm InP-HEMT
technology with f_T and f MAx of 320 and 700 GHz, respectively. To attain the positive gain …

In this paper, the design and performance of a medium-power amplifier (MPA) submillimeter-
wave monolithic integrated circuit (S-MMIC) is presented. The MPA demonstrates a flat small …

A 600 GHz monolithic frequency multiplier circuit fabricated using 0.25 μm InP HBT
(heterojunction bipolar technology) technology is reported. The multiplier uses two 6 μm …

This letter presents a WR-1.5 frequency doubler implemented in a 130-nm InP
heterojunction-bipolar-transistor (HBT) technology. The doubler core uses a differential …

A vector‐sum phase shifter that provides 90° phase control with a positive signal gain is
successfully demonstrated at WR‐3 band. The integrated circuit consists of input and output …