Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs)
grown on sapphire and GaN substrates were investigated. Temperature-dependent …
grown on sapphire and GaN substrates were investigated. Temperature-dependent …
High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si (111)
YL Chang, JL Wang, F Li, Z Mi - Applied Physics Letters, 2010 - pubs.aip.org
The authors report on the achievement of nearly defect-free, vertically aligned InGaN/GaN
dot-in-a-wire nanoscale heterostructures grown directly on Si (111) substrates by molecular …
dot-in-a-wire nanoscale heterostructures grown directly on Si (111) substrates by molecular …
Optical properties of InGaN-based red multiple quantum wells
X Hou, SS Fan, H Xu, D Iida, YJ Liu, Y Mei… - Applied Physics …, 2022 - pubs.aip.org
In this work, we present the characterization of red InGaN/GaN multiple-quantum-well
(MQW) light-emitting diode structures. The optical properties of two MQW structures with …
(MQW) light-emitting diode structures. The optical properties of two MQW structures with …
Improvement of optical properties of InGaN-based red multiple quantum wells
X Hou, T Yang, SS Fan, H Xu, D Iida, YJ Liu, Y Mei… - Optics …, 2023 - opg.optica.org
The realization of red-emitting InGaN quantum well (QW) is a hot issue in current nitride
semiconductor research. It has been shown that using a low-Indium (In)-content pre-well …
semiconductor research. It has been shown that using a low-Indium (In)-content pre-well …
Green Electroluminescence from Radial m-Plane InGaN Quantum Wells Grown on GaN Wire Sidewalls by Metal–Organic Vapor Phase Epitaxy
We demonstrate green emission from InGaN/GaN multiple quantum wells (MQWs) grown on
m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were …
m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were …
Thermodynamic states and phase diagrams for bulk-incoherent, bulk-coherent, and epitaxially-coherent semiconductor alloys: Application to cubic (Ga, In) N
The morphology and microstructure of A 1− x B x C semiconductor alloys depend on the
type of thermodynamic states established during growth. We distinguish three main cases:(i) …
type of thermodynamic states established during growth. We distinguish three main cases:(i) …
Dislocation reduction and stress relaxation of GaN and InGaN multiple quantum wells with improved performance via serpentine channel patterned mask
The existence of high threading dislocation density (TDD) in GaN-based epilayers is a long
unsolved problem, which hinders further applications of defect-sensitive GaN-based …
unsolved problem, which hinders further applications of defect-sensitive GaN-based …
Efficiency enhancement of InGaN/GaN solar cells with nanostructures
We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at
a wavelength of 520 nm. Nanostructures with a periodic nanorod or nanohole array are …
a wavelength of 520 nm. Nanostructures with a periodic nanorod or nanohole array are …
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness
W Liu, DG Zhao, DS Jiang, P Chen, ZS Liu… - Journal of Alloys and …, 2015 - Elsevier
Abstract Green light emitting InGaN/GaN multiple-quantum-well (MQW) structures with
varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD) …
varying well thickness are grown via metal-organic chemical vapor deposition (MOCVD) …
Green and blue emissions in phase-separated InGaN quantum wells
F Wang, Z Ji, Q Wang, X Wang, S Qu, X Xu… - Journal of Applied …, 2013 - pubs.aip.org
We have investigated temperature-dependent photoluminescence (PL) of green and blue
light-emitting InGaN/GaN multiple quantum wells at different excitation powers. Two InGaN …
light-emitting InGaN/GaN multiple quantum wells at different excitation powers. Two InGaN …