A review on GeTe thin film-based phase-change materials
Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family,
which undergoes reversible transition between amorphous and crystalline phase when …
which undergoes reversible transition between amorphous and crystalline phase when …
Exploring the potential of GeTe for the application in Thermophotovoltaic (TPV) cell
Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been used in
phase change memory and thermoelectric power generation. In this article, we study the …
phase change memory and thermoelectric power generation. In this article, we study the …
Multilevel reversible laser-induced phase transitions in GeTe thin films
VV Ionin, AV Kiselev, NN Eliseev… - Applied Physics …, 2020 - pubs.aip.org
This paper presents the results of a study on the structural properties and dynamics of
conductivity of thin (d∼ 100 nm) films of germanium telluride depending on the phase states …
conductivity of thin (d∼ 100 nm) films of germanium telluride depending on the phase states …
Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers
R Chahine, M Tomelleri, J Paterson… - Journal of Materials …, 2023 - pubs.rsc.org
Engineering of chalcogenide phase-change materials at the nanoscale is required to
improve the performances of ultimate size memory devices and reduce their power …
improve the performances of ultimate size memory devices and reduce their power …
Ferroelectric nanodomains in epitaxial GeTe thin films
In the quest for materials for ferroelectrics-based spintronics with a large spin-orbit coupling,
it is essential to carefully control the ferroelectric domains structure, their spatial …
it is essential to carefully control the ferroelectric domains structure, their spatial …
Study of structural, electronic, optical and mechanical properties under pressure of GeTe for use in optoelectronic devices
S Malki, L El Farh, I Guesmi, A Challioui - Emergent Materials, 2024 - Springer
In order to gain a deeper understanding of the Germanium Telluride (GeTe) system, we
performed a comprehensive set of first principles calculations to study the variation of the …
performed a comprehensive set of first principles calculations to study the variation of the …
Nano-Scanning Calorimetry Applied to Phase Change Processes in GeTe Thin Films
L Gao, M Liu, S Qu, J Liu, S Fu, Y Ding… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The parallel nano-scanning calorimeter (PnSC) is a device for calorimetric measurement of
nanoscale materials. Compared with traditional scanning calorimetry of bulk materials …
nanoscale materials. Compared with traditional scanning calorimetry of bulk materials …
Exploring the evolution of mass density and thickness of N-doped Ge-rich GeSbTe during multistep crystallization
J Remondina, A Portavoce, Y Le Friec, D Benoit… - Scientific Reports, 2024 - nature.com
Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next
generation of embedded phase change memories because of their good thermal stability …
generation of embedded phase change memories because of their good thermal stability …
Innovative Nanocomposites for Low Power Phase‐Change Memory: GeTe/C Multilayers
D Térébénec, N Bernier, N Castellani… - physica status solidi …, 2022 - Wiley Online Library
Innovative nanocomposites consisting of [(GeTe) 4 nm/C1 nm] 10 multilayers (MLs)
deposited by magnetron sputtering are integrated in phase‐change memory (PCM) test …
deposited by magnetron sputtering are integrated in phase‐change memory (PCM) test …
Kinetic Monte Carlo simulations of Ge–Sb–Te thin film crystallization
A Portavoce, G Roland, J Remondina… - …, 2022 - iopscience.iop.org
Simulation of atomic redistribution in Ge–Sb–Te (GST)-based memory cells during
SET/RESET cycling is needed in order to understand GST memory cell failure and to design …
SET/RESET cycling is needed in order to understand GST memory cell failure and to design …