Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation

M Ghosh, SB Deb, A Acharyya, A Biswas, H Inokawa… - Nanomaterials, 2024 - mdpi.com
In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-
terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit …

Study of GaN Schottky Barrier IMPATT Diodes with Self-Aligned Field Plate for Terahertz Applications

X Huang, LA Yang, JH Zhou, XY Wang, XH Ma… - Microelectronics …, 2025 - Elsevier
This article investigates a self-aligned field plate to enhance the GaN Schottky barrier
IMPATT diodes at the low-frequency end of the terahertz regime by restraining the electric …