Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials with a
graphitic lattice structure. GNRs possess high mobility and current-carrying capability …

Along with deep scaling transistors and complex electronics information exchange networks,
very-large-scale-integrated (VLSI) circuits require high performance and ultra-low power …

This work developed a plasma atomic layer etching (ALE) process for molybdenum (Mo)
with surface fluorination and ion bombardment. The Mo surface was fluorinated with CHF 3 …

As the interconnect delay exceeds the gate delay, the integrated circuit (IC) technology has
evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic …

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …

In this paper, the interfacial contact behavior and atomic conformation evolution between
single-walled carbon nanotubes (SWNTs) and nanowires are studied on an atomic scale …

Applicability of copper-carbon nanotube (Cu-CNT) composites as on-chip global VLSI
interconnects is investigated comprehensively. Electrical modeling of Cu-CNT composite …

In this study, an atomic layer etching (ALE) process for molybdenum was developed in two
steps: plasma oxidation and plasma chlorination. In the plasma oxidation step, molybdenum …

We investigated the interfacial contact behavior of the side-to-side biaxial heterostructure
between carbon nanotubes and silver nanowires on an atomic scale. The nanotubes can …

In this study, a thermal atomic layer etching process for Co comprising two steps––plasma
chlorination and chelation with hexafluoroacetylacetone (Hhfac)––was developed. The Co …