Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

Nanostructured materials may be defined as those materials whose structural elements-
clusters, crystallites or molecules-have dimensions in the 1 to 100 nm range. The explosion …

A review is given on the formation mechanisms and the properties of Si/Ge nanostructures
that have been synthesized by self-assembling and self-ordering during heteroepitaxy …

In recent years, quantum dots have been successfully grown by self-assembling processes.
For optoelectronic device applications, the quantum-dot structures have advantages such as …

Free-standing nanotubes are formed by rolling-up InGaAs/GaAs bilayers on a GaAs
substrate. We present a systematic study of the tube diameter as a function of bilayer …

We report on a combination of lithography and self-assembly techniques which results in
long-range two-dimensionally ordered Ge islands. Island lattices with perpendicular but also …

In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

We demonstrate a self-assembling method for growing semiconductor quantum dots into
ordered lattices. The quantum dot nucleation and positioning into lattices was achieved …

Self-assembled growth in combination with prepatterning yields ordered lines of Ge islands
on a planar Si (001) surface. The self-assembled Ge nanostructures are grown on top of a …