A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire
Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
T Takano, T Mino, J Sakai, N Noguchi… - Applied Physics …, 2017 - iopscience.iop.org
Enhancing the light-extraction efficiency is the key issue for realizing highly efficient AlGaN-
based ultraviolet light-emitting diodes (UV-LEDs). We introduced several features to improve …
based ultraviolet light-emitting diodes (UV-LEDs). We introduced several features to improve …
AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates
The disinfection industry would greatly benefit from efficient, robust, high-power deep-
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …
ultraviolet light-emitting diodes (UV–C LEDs). However, the performance of UV–C AlGaN …
Progress in efficient doping of high aluminum-containing group III-nitrides
YH Liang, E Towe - Applied Physics Reviews, 2018 - pubs.aip.org
The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …
that are critical to a number of technologies in modern life—the other being silicon. Light …
High external quantum efficiency (6.8%) UV-A LEDs on AlN templates with quantum barrier optimization
AlGaN-based UV-A LEDs have wide applications in medical treatment and chemical
sensing; however, their efficiencies are still far behind visible LEDs or even shorter …
sensing; however, their efficiencies are still far behind visible LEDs or even shorter …
[HTML][HTML] 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
Y Matsukura, T Inazu, C Pernot, N Shibata… - Applied Physics …, 2021 - iopscience.iop.org
In this study, we investigated the relationship of light output power with the optical thickness
of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high …
of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high …
[HTML][HTML] Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs)
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …
emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light …
Group III-nitride-based ultraviolet light-emitting diodes: ways of increasing external quantum efficiency
There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …