Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

电力电子是现代科学, 工业和国防的重要支撑技术, 功率器件是电力电子技术的核心和基础,
其应用是电力电子技术发展的驱动力. 该文对现代电力电子器件, 特别是碳化硅(SiC) …

Silicon offers multiple advantages to power circuit designers, but at the same time suffers
from limitations that are inherent to silicon material properties, such as low bandgap energy …

SiC electronic device technology has made rapid progress during the past decade. In this
paper, we review the evolution of SiC power MOSFETs between 1992 and the present …

Silicon carbide (SiC) offers significant advantages for power-switching devices because the
critical field for avalanche breakdown is about ten times higher than in silicon. SiC power …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

碳化硅作为一种宽禁带材料, 具有高击穿场强, 高饱和电子漂移速率, 高热导率等优点,
可以实现高压, 大功率, 高频, 高温应用的新型功率半导体器件. 该文对碳化硅功率半导体器件的 …

With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …

Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …