Characterization of self-heating process in GaN-based HEMTs
D Gryglewski, W Wojtasiak, E Kamińska, A Piotrowska - Electronics, 2020 - mdpi.com
Thermal characterization of modern microwave power transistors such as high electron-
mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for …
mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for …
Optimized design and application of GaN based power amplifier for C-Ku band of AESA RADAR
SS Shirsat, PY Sai, AAB Raj… - 2022 International …, 2022 - ieeexplore.ieee.org
This paper presents the optimized design and application of a C-Ku band for GaN (Gallium
Nitrate) based PA (Power Amplifier). PA and LNA are most important sub components of …
Nitrate) based PA (Power Amplifier). PA and LNA are most important sub components of …
Application of GaN HEMT Microwave Transistors in Amplifiers for T/R Radar Modules
D Kuchta - 2020 - repo.pw.edu.pl
This dissertation is devoted to research on the development of microwave amplifiers with
GaN HEMTs designed for minimal transmittance distortions within certain time interval of …
GaN HEMTs designed for minimal transmittance distortions within certain time interval of …