High thermal conductivity of submicrometer aluminum nitride thin films sputter-deposited at low temperature

C Perez, AJ McLeod, ME Chen, S Yi, S Vaziri, R Hood… - ACS …, 2023 - ACS Publications
Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent
thermal conductivity, but high-quality films typically require exceedingly hot deposition …

[HTML][HTML] Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

RL Xu, M Muñoz Rojo, SM Islam, A Sood… - Journal of Applied …, 2019 - pubs.aip.org
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet
photonics, where an understanding of its thermal properties is essential. Here, we measure …

MOCVD of AlN on epitaxial graphene at extreme temperatures

A Kakanakova-Georgieva, IG Ivanov… - …, 2021 - pubs.rsc.org
The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial
graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …

Ab initio molecular dynamics of atomic-scale surface reactions: Insights into metal organic chemical vapor deposition of AlN on graphene

DG Sangiovanni, GK Gueorguiev… - Physical Chemistry …, 2018 - pubs.rsc.org
Metal organic chemical vapor deposition (MOCVD) of group III nitrides on graphene
heterostructures offers new opportunities for the development of flexible optoelectronic …

Stability and residual stresses of sputtered wurtzite AlScN thin films

E Österlund, G Ross, MA Caro, M Paulasto-Kröckel… - Physical Review …, 2021 - APS
Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the
material and increases the performance of piezoelectric microelectromechanical systems …

Piezoelectric aluminum nitride thin films for CMOS compatible MEMS: Sputter deposition and doping

S Sandeep, RMR Pinto, J Rudresh… - Critical Reviews in …, 2024 - Taylor & Francis
Amongst the piezoelectric thin films suited for microelectromechanical systems (MEMS), AlN
has gained particular technological relevance due to its unique material properties (large …

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

K Chen, Y Zhang, J Zhang, X Wang, Y Yao, J Ma… - Ceramics …, 2022 - Elsevier
Abstract High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN
buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC …

Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls

E Österlund, H Seppänen, K Bespalova… - Journal of Vacuum …, 2021 - pubs.aip.org
Atomic layer deposition (ALD) of aluminum nitride (AlN) using in situ atomic layer annealing
(ALA) is studied for microelectromechanical systems (MEMS). Effective piezoelectric in …

[HTML][HTML] Microstructural influence of the thermal behavior of arc deposited TiAlN coatings with high aluminum content

ABB Chaar, L Rogström… - Journal of Alloys and …, 2021 - Elsevier
The influence of the microstructure on the thermal behavior of cathodic arc deposited TiAlN
coatings was studied as a function of isothermal annealing. Two compositionally similar but …

Introduction to gallium nitride properties and applications

F Roccaforte, M Leszczynski - … Technology: Power Electronics …, 2020 - Wiley Online Library
This chapter is a general introduction to the properties and applications of gallium nitride
(GaN) and related materials. In the first part, after an historical background on the relevant …