Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here, we measure …
The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …
Metal organic chemical vapor deposition (MOCVD) of group III nitrides on graphene heterostructures offers new opportunities for the development of flexible optoelectronic …
Scandium-alloying of aluminum nitride (AlScN) enhances the piezoelectric properties of the material and increases the performance of piezoelectric microelectromechanical systems …
S Sandeep, RMR Pinto, J Rudresh… - Critical Reviews in …, 2024 - Taylor & Francis
Amongst the piezoelectric thin films suited for microelectromechanical systems (MEMS), AlN has gained particular technological relevance due to its unique material properties (large …
K Chen, Y Zhang, J Zhang, X Wang, Y Yao, J Ma… - Ceramics …, 2022 - Elsevier
Abstract High-quality AlGaN/GaN/AlN heterostructures with thin GaN channel and thick AlN buffer layer were grown by metal organic chemical vapor deposition (MOCVD) on SiC …
E Österlund, H Seppänen, K Bespalova… - Journal of Vacuum …, 2021 - pubs.aip.org
Atomic layer deposition (ALD) of aluminum nitride (AlN) using in situ atomic layer annealing (ALA) is studied for microelectromechanical systems (MEMS). Effective piezoelectric in …
ABB Chaar, L Rogström… - Journal of Alloys and …, 2021 - Elsevier
The influence of the microstructure on the thermal behavior of cathodic arc deposited TiAlN coatings was studied as a function of isothermal annealing. Two compositionally similar but …
F Roccaforte, M Leszczynski - … Technology: Power Electronics …, 2020 - Wiley Online Library
This chapter is a general introduction to the properties and applications of gallium nitride (GaN) and related materials. In the first part, after an historical background on the relevant …