A vertical-cavity surface emitting laser (VCSEL) was invented 30 years ago. A lot of unique
features can be expected, such as low-power consumption, wafer-level testing, small …

The present paper reviews recent achievements in the fabrication of diode lasers for the
near-infrared range on GaAs substrates. 1.3 µm light emitters are currently widely used in …

The surface-emitting laser (SEL) is considered one of the most important devices for optical
interconnects and LANs, enabling ultra parallel information transmission in lightwave and …

The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed
optical local-area networks (LANs) and even wide-area networks (WANs). This device is …

In this paper we present a successful growth of highly strained GaInAs/GaAs quantum wells
by low-pressure organometallic vapor-phase epitaxy using tertiarybutylarsine. The transition …

This letter reports studies on highly strained and strain-compensated InGaAs quantum-well
(QW) active diode lasers on GaAs substrates, fabricated by low-temperature (550/spl deg/C) …

A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-
containing solid state material includes the steps of selective deposition of a second …

4,806,996 A 2, 1989 Luryi.......................... 357/16 4,952,526 A 8, 1990 Pribat et al.................
438,412 5,019,874 A 5/1991 Inoue et al........ 357, 16 5,075,744 A 12/1991 …

Characteristic temperature coefficients of the threshold current (T/sub 0/) and the external
differential quantum efficiency (T/sub 1/) are studied as simple functions of the temperature …

In this work, for the first time, the total refractive index (TRICs) and total absorption
coefficients (TACs) of In x Ga 1-x As/GaAs Mathieu quantum dot (MQD) with hydrogenic …