Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

Electronic, band offset, and thermoelectric properties of ZnO/GaN heterostructure from first-principles study

N Kouaydi, M Zemzemi - Journal of Electronic Materials, 2020 - Springer
Structural, electronic, band offset, and thermoelectric properties of zinc oxide (ZnO), gallium
nitride (GaN), and the ZnO/GaN heterostructure have been investigated. First, first-principles …
被引用次数：8 相关文章 所有 4 个版本