Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …

Temperature-and field-induced phase transitions in ferroelectric nanoscale TiN/Si: HfO 2/TiN
capacitors with 3.8 to 5.6 mol% Si content are investigated for energy conversion and …

Refrigeration based on the electrocaloric effect can offer many advantages over
conventional cooling technologies in terms of efficiency, size, weight, and power source. The …

Ultrathin Hf1–x Zr x O2 films have attracted tremendous interest since they show ferroelectric
behavior at the nanoscale, where other ferroelectrics fail to stabilize the polar state. Their …

The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes
robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar …

Abstract Hafnium oxide (HfO 2), zirconium oxide (ZrO 2), and the solid-solution (Hf 1-x Zr x O
2) system continue to be some of the most relevant ferroelectric materials, in particular, for …

To date, several portable, wearable, and even implantable electronics have been
incorporated into ultracompact devices as miniaturized energy-autonomous systems …

Strontium doped hafnium oxide (Sr: HfO 2) ferroelectric thin films with strontium
concentrations ranging from 0 to 20mol% were processed with inorganic hafnium source …

The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide,(Hf,
Zr) O 2⁠, thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by …

Doped HfO 2 has become a promising candidate for non-volatile memory devices since it
can be easily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr …