Quantum dots (QDs) have been explored for many photonic applications, both as emitters
and absorbers. Thanks to the bandgap tunability and ease of processing, they are prominent …

The limited investigation of the optical properties of HgTe nanocrystal (NC) thin films has
become a bottleneck for the electromagnetic design of devices. Using broadband …

We have developed a 1.62μm pixel pitch global shutter sensor optimized for imaging in the
near infrared (NIR) and shortwave infrared (SWIR) regions of the light spectrum. This …

Image sensors are must-have components of most consumer electronics devices. They
enable portable camera systems, which find their way into billions of devices annually. Such …

The arrangement and main parameters of the photosensory structures and devices based
on quantum dots of the elements of the II, IV, and VI groups of the periodic table made by …

Highly sensitive infrared photodetectors are needed in numerous sensing and imaging
applications. In this paper, we report on extended short-wave infrared (e-SWIR) avalanche …

Quantum dot photodetectors are a promising platform technology that ST Microelectronics
has developed, scaled‐up, and is ready to commercialize. Our quantum dot‐based global …

Описаны устройство и основные параметры фотосенсорных структур и приборов на
основе квантовых точек, изготовленных методами коллоидной химии из элементов II …

We propose a method to measure the fundamental parameters that govern diffusion
transport in optically thin quantum dot semiconductor films and apply it to quantum dot …

We review the design and main parameters of field-effect transistors based on 2D structures
of transition metal di-and trichalcogenides MoS2, MoSe2, MoTe2, WS2, WSe2, Mo1‒x W x …