Heusler alloys: Past, properties, new alloys, and prospects

S Tavares, K Yang, MA Meyers - Progress in Materials Science, 2023 - Elsevier
Heusler alloys, discovered serendipitously at the beginning of the twentieth century, have
emerged in the twenty-first century as exciting materials for numerous remarkable functional …

Heusler alloys for spintronic devices: review on recent development and future perspectives

K Elphick, W Frost, M Samiepour, T Kubota… - … and technology of …, 2021 - Taylor & Francis
Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …

[HTML][HTML] Spintronic devices: a promising alternative to CMOS devices

P Barla, VK Joshi, S Bhat - Journal of Computational Electronics, 2021 - Springer
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Magnetoresistive sensor development roadmap (non-recording applications)

C Zheng, K Zhu, SC De Freitas… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Magnetoresistive (MR) sensors have been identified as promising candidates for the
development of high-performance magnetometers due to their high sensitivity, low cost, low …

Structural, magnetic, electronic and mechanical properties of full-Heusler alloys Co2YAl (Y= Fe, Ti): first principles calculations with different exchange-correlation …

B Fadila, M Ameri, D Bensaid, M Noureddine… - Journal of Magnetism …, 2018 - Elsevier
The structural, magnetic, electronic, elastic and mechanical properties of full-Heusler
compounds Co 2 YAl (Y= Fe, Ti), in L2 1 type structure are determined using the density …

Adaptive oxide electronics: A review

SD Ha, S Ramanathan - Journal of applied physics, 2011 - pubs.aip.org
Novel information processing techniques are being actively explored to overcome
fundamental limitations associated with CMOS scaling. A new paradigm of adaptive …

Spin-gapless semiconductors for future spintronics and electronics

X Wang, Z Cheng, G Zhang, H Yuan, H Chen, XL Wang - Physics Reports, 2020 - Elsevier
In recent years, spin-gapless semiconductors (SGSs) with parabolic and linear band
dispersions have aroused great interest worldwide in the field of materials science due to …

Large half-metallic gaps in the quaternary Heusler alloys CoFeCrZ (Z= Al, Si, Ga, Ge): A first-principles study

GY Gao, L Hu, KL Yao, B Luo, N Liu - Journal of alloys and compounds, 2013 - Elsevier
The high Curie temperatures and compatible lattice structure with conventional
semiconductors for half-metallic Co2FeZ and Co2CrZ (Z= Al, Si, Ga, Ge) inspired us to …

High spin polarization in epitaxial films of ferrimagnetic MnGa

H Kurt, K Rode, M Venkatesan, P Stamenov… - Physical Review B …, 2011 - APS
Ferrimagnetic Mn 3 Ga exhibits a unique combination of low saturation magnetization (M s=
0.11 MA m-1) and high perpendicular anisotropy with a uniaxial anisotropy constant of K u …

Spin-transistor electronics: An overview and outlook

S Sugahara, J Nitta - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
Spin transistors are a new concept device that unites an ordinary transistor with the useful
functions of a spin (magnetoresistive) device. They are expected to be a building block for …