Intel's 22FFL is the comprehensive FinFET technology offering the best-in-class RF
transistors achieving ft and fmax above 300GHz and 450GHz, respectively. The addition of a …

Unique High-Power FinFET device with multiple workfunction materials and oxide thickness
under a common gate, dubbed as HyPowerFF, is introduced. The proposed devices are as …

A power amplifier's linearity determines the emission signal's quality and the efficiency of the
system. Nonlinear distortion can result in system bit error, out-of-band radiation, and …

This paper reports on the first stacked field-effect transistor (stacked-FET) submillimeter-
wave monolithic integrated circuit (S-MMIC) power amplifier cell operating at 0.3 THz and …

Stacked MOS power amplifiers (PA) are commonly used in SOI nodes but also have the
potential to be realized in bulk CMOS nodes. In this paper they are analyzed in millimeter …

This paper proposes how to define the optimum number of stacked transistors in a multi-
stacked CMOS power amplifier (PA) topology, based on several physical as well as circuit …

This paper presents four compact lumped-element Wilkinson power combiners (WPC)
operating at 5 GHz in 28-nm bulk CMOS. To minimize the chip area, the inductances in the …

Metal semiconductor field effect transistors (MESFETs) have been fabricated using a 45-nm
silicon-on-insulator CMOS technology available from Global Foundries. MESFETs with gate …

功率放大器的线性度决定了通信系统的信号发射质量与系统的发射效率. 非线性失真会导致系统
误码, 带外辐射以及临近信道干扰, 严重影响着通信系统的质量和可靠性. 论文从毫米波功率 …

This paper discusses the design requirements of class C auxiliary (aux) amplifiers deployed
in Doherty power amplifiers (DPA). Taking conduction angle and back-off (BO) level into …