Following a short history of its development, the latest advances in the physics of InN and
the arguments surrounding the band-gap controversy are critically reviewed. The role of …

The role of point defects related to the presence of excess nitrogen is elucidated for InN thin
films grown by different techniques. Elastic recoil detection analysis has shown the presence …

We report on the Raman analysis of InN films grown by molecular beam epitaxy (MBE), RF
sputtering and remote-plasma enhanced chemical vapor deposition (RPE-CVD). Varying …

We present a comprehensive study of the InN dielectric function from the midinfrared range
up to 6.5 eV employing spectroscopic ellipsometry at room temperature. The single …

We demonstrate that the phonon frequencies that are reported in the literature for indium
nitride (InN), films are all consistently correlated to the strain state of the material. Raman …

Linear combination of atomic orbitals electron band structure calculations are used to
examine the influence of common defect structures that may arise as artifacts during the …

It is shown that the 0.7 eV band gap recently announced for InN is actually due to a sub
band gap deep level trap with| s〉 like symmetry. This level had been known in the literature …

We report the observation of a broad absorption in the 1.25 eV region that is typical of thin
InN films. Such a feature we attribute to light absorption at the energy of the fundamental …

New metric system called electron metric system having basic metric constant is introduced.
The connection between the electron metric system and the external metric system is …

The influence of antisite defects in InN is analyzed theoretically using a Linear Combination
of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps …