[HTML][HTML] Lead free perovskite based heterojunction photodetectors: A mini review
SA Behera, PGR Achary - Applied Surface Science Advances, 2023 - Elsevier
In recent years, heterojunction photodetectors have been proposed as promising
optoelectronics. The heterojunction photodetectors have garnered attention on a global …
optoelectronics. The heterojunction photodetectors have garnered attention on a global …
Compact drain current model of a double-gate raised buried oxide TFET for integrated circuit application
S Meriga, B Bhowmick - Journal of Computational Electronics, 2023 - Springer
A compact model for the drain current of a double-gate tunnel field-effect transistor (TFET)
operating in the subthreshold and super-threshold regions is proposed in this paper. Using …
operating in the subthreshold and super-threshold regions is proposed in this paper. Using …
Ferroelectricity of low thermal-budget HfAlO x for devices with metal–ferroelectric–insulator–semiconductor structure
KY Chen, KL Chu, PH Chen, YH Wu - RSC advances, 2016 - pubs.rsc.org
The effect of annealing temperature on the ferroelectricity of HfAlOx with Al concentration of
4.5% is physically and electrically investigated by metal–ferroelectric–insulator …
4.5% is physically and electrically investigated by metal–ferroelectric–insulator …
The effect of Nb incorporation on the electronic properties of anodic HfO2
Hafnium oxide and Nb doped HfO 2 were grown by anodizing sputtering-deposited Hf and
Hf-4at.% Nb. Photoelectrochemical characterization was carried out in order to estimate …
Hf-4at.% Nb. Photoelectrochemical characterization was carried out in order to estimate …
Physico-chemical characterization of anodic oxides on Hf as a function of the anodizing conditions
Anodic films were grown to 5 V (Ag/AgCl) on mechanically polished Hf in 0.1 M ammonium
biborate and 0.1 M NaOH. Independent of the anodizing conditions, the …
biborate and 0.1 M NaOH. Independent of the anodizing conditions, the …
Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X …
Synchrotron radiation-based grazing incidence X-ray diffraction (GI-XRD) technique is
employed here to estimate the residual stress of< 10 nm thin hafnium oxide film deposited …
employed here to estimate the residual stress of< 10 nm thin hafnium oxide film deposited …
Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge (1 1 0) metal oxide semiconductor devices
The lower mobility for p-type Ge based is always an issue due to slow traps generation at
the interface of the metal oxide semiconductor (MOS) device which designates the defects in …
the interface of the metal oxide semiconductor (MOS) device which designates the defects in …
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
The study of ZrO 2 thin films on SiC group IV compound semiconductor has been studied as
a high mobility substrates. The ZrO 2 thin films were deposited using the Plasma Enhanced …
a high mobility substrates. The ZrO 2 thin films were deposited using the Plasma Enhanced …